Gated spin transport through an individual single wall carbon nanotube
Emiliano Pallecchi
Universität Regensburg

Oct. 26, 2005, 12:30 p.m.


(From cond-mat/0510112): Hysteretic switching in the magnetoresistance of short-channel, ferromagnetically contacted individual single wall carbon nanotubes is observed, providing strong evidence for nanotube spin transport. By varying the voltage on a capacitively coupled gate, the magnetoresistance can be reproducibly modified between +10% and -15%. The results are explained in terms of wave vector matching of the spin polarized electron states at the ferromagnetic / nanotube interfaces.



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Gated spin transport through an individual single wall carbon nanotube
Emiliano Pallecchi
Universität Regensburg

Oct. 26, 2005, 12:30 p.m.


(From cond-mat/0510112): Hysteretic switching in the magnetoresistance of short-channel, ferromagnetically contacted individual single wall carbon nanotubes is observed, providing strong evidence for nanotube spin transport. By varying the voltage on a capacitively coupled gate, the magnetoresistance can be reproducibly modified between +10% and -15%. The results are explained in terms of wave vector matching of the spin polarized electron states at the ferromagnetic / nanotube interfaces.



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