Carbon atoms arranged in a honeycomb lattice constitute the basic building block of several nanostructures as nanotubes, fullerenes, graphene and graphite. The versatile and unusual electronic properties of these allotropic forms have become object of intense fundamental studies as well as of applied research. However, the possible realization of electronic devices, where the active element is a carbon structure, relays on the deep knowledge of the electronic structure in realistic circumstances. As an example, the lattice defects or adsorbates, the interaction with a substrate, as well as the presence of a modulating potential, which might strongly influence the electronic properties, should be considered. Here, I will report on local scale investigations of the electron and phonon structure of epitaxially grown graphene on SiC(0001) crystal and of isolated SWCNT on metallic substrates. By mean of a low temperature STM, we obtained insight in the local electronic structure of the mono and bilayer graphene and on the role of the supporting substrate. The electron and phonon density of states has been mapped in close proximity to topological defects, like intermolecular junctions, tube endings, or crossed junctions of tubes where the tube cage is sensitively deformed.
Carbon atoms arranged in a honeycomb lattice constitute the basic building block of several nanostructures as nanotubes, fullerenes, graphene and graphite. The versatile and unusual electronic properties of these allotropic forms have become object of intense fundamental studies as well as of applied research. However, the possible realization of electronic devices, where the active element is a carbon structure, relays on the deep knowledge of the electronic structure in realistic circumstances. As an example, the lattice defects or adsorbates, the interaction with a substrate, as well as the presence of a modulating potential, which might strongly influence the electronic properties, should be considered. Here, I will report on local scale investigations of the electron and phonon structure of epitaxially grown graphene on SiC(0001) crystal and of isolated SWCNT on metallic substrates. By mean of a low temperature STM, we obtained insight in the local electronic structure of the mono and bilayer graphene and on the role of the supporting substrate. The electron and phonon density of states has been mapped in close proximity to topological defects, like intermolecular junctions, tube endings, or crossed junctions of tubes where the tube cage is sensitively deformed.
